Title

Nonlinear Polarization Switching Near Half The Band-Gap In Semiconductors

Authors

Authors

C. C. Yang; A. Villeneuve; G. I. Stegeman; C. H. Lin; H. H. Lin;I. P. Chiou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Opt. Lett.

Keywords

FIBERS; Optics

Abstract

Experimental results of nonlinear polarization switching based on the phenomenon of power-dependent polarization evolution in an AlGaAs strip-loaded waveguide are reported. At 1550 nm, an input peak intensity of 28 GW/cm2 (before the waveguide) results in 30% power switching in a 2-cm-long waveguide. Numerical studies show that we can make the nonlinear switching more efficient by using the nonlinear anisotropy in a multiple-quantum-well waveguide.

Journal Title

Optics Letters

Volume

18

Issue/Number

18

Publication Date

1-1-1993

Document Type

Article

DOI Link

http://dx.doi.org/10.1364/ol.18.001487

Language

English

First Page

1487

Last Page

1489

WOS Identifier

WOS:A1993LW88500003

ISSN

0146-9592

Recommended Citation

"Nonlinear Polarization Switching Near Half The Band-Gap In Semiconductors" (1993). Faculty Bibliography 1990s. 2928.
https://stars.library.ucf.edu/facultybib1990/2928