Nonlinear Polarization Switching Near Half The Band-Gap In Semiconductors
Abbreviated Journal Title
Experimental results of nonlinear polarization switching based on the phenomenon of power-dependent polarization evolution in an AlGaAs strip-loaded waveguide are reported. At 1550 nm, an input peak intensity of 28 GW/cm2 (before the waveguide) results in 30% power switching in a 2-cm-long waveguide. Numerical studies show that we can make the nonlinear switching more efficient by using the nonlinear anisotropy in a multiple-quantum-well waveguide.
"Nonlinear Polarization Switching Near Half The Band-Gap In Semiconductors" (1993). Faculty Bibliography 1990s. 2928.