Deposition Parameter Studies And Surface-Acoustic-Wave Characterization Of Pecvd Silicon-Nitride Films On Lithium-Niobate

    Authors

    J. H. Hines; D. C. Malocha; K. B. Sundaram; K. J. Casey;K. R. Lee

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Ultrason. Ferroelectr. Freq. Control

    Keywords

    PLASMA-ENHANCED CVD; Acoustics; Engineering, Electrical & Electronic

    Abstract

    Silicon nitride films were deposited by a plasma enhanced chemical vapor deposition technique using silane-ammonia as the reactant gas mixture. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, RF power, time of deposition and electrode spacing on the deposition and etch rates were investigated. From the matrix of deposition conditions, the deposition parameters for high quality films applicable to surface acoustic wave (SAW) technology were found. Experimental results on the acoustic loss, reflectivity and velocity dispersion for the fabricated devices are presented.

    Journal Title

    Ieee Transactions on Ultrasonics Ferroelectrics and Frequency Control

    Volume

    42

    Issue/Number

    3

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    397

    Last Page

    403

    WOS Identifier

    WOS:A1995QV97300011

    ISSN

    0885-3010

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