Title
2-Dimensional Lateral Bipolar-Transistor Model For Circuit Simulation
Abbreviated Journal Title
Int. J. Electron.
Keywords
Engineering, Electrical & Electronic
Abstract
A lateral bipolar transistor circuit model including two-dimensional current characteristics has been developed. The model accounts for the physical effects of base width modulation, base conductivity modulation, hole-electron plasma-induced bandgap narrowing, and current-dependent base resistance. SPICE simulation employing the present model shows good agreement with computer experimental results.
Journal Title
International Journal of Electronics
Volume
70
Issue/Number
6
Publication Date
1-1-1991
Document Type
Article
Language
English
First Page
1041
Last Page
1048
WOS Identifier
ISSN
0020-7217
Recommended Citation
"2-Dimensional Lateral Bipolar-Transistor Model For Circuit Simulation" (1991). Faculty Bibliography 1990s. 379.
https://stars.library.ucf.edu/facultybib1990/379
Comments
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