2-Dimensional Lateral Bipolar-Transistor Model For Circuit Simulation

    Authors

    J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    Engineering, Electrical & Electronic

    Abstract

    A lateral bipolar transistor circuit model including two-dimensional current characteristics has been developed. The model accounts for the physical effects of base width modulation, base conductivity modulation, hole-electron plasma-induced bandgap narrowing, and current-dependent base resistance. SPICE simulation employing the present model shows good agreement with computer experimental results.

    Journal Title

    International Journal of Electronics

    Volume

    70

    Issue/Number

    6

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    1041

    Last Page

    1048

    WOS Identifier

    WOS:A1991FV55100003

    ISSN

    0020-7217

    Share

    COinS