Keywords
Aluminum; Physics; Applied
Abstract
1 MeV carbon ions were implanted into single-crystal copper which was then annealed in argon at temperatures ranging from 350 to 750-degrees-C. Regrowth of the radiation-damaged copper was examined by RBS-channeling measurements. Carbon segregation occurred on annealing at 750-degrees-C. Prolonged annealing at 750-degrees-C caused blistering of the copper layer over the buried carbon. After removal of the blistered copper overlayer, the previously buried carbon layer was examined by Raman scattering, showing that graphite is the dominant phase.
Journal Title
Applied Physics Letters
Volume
61
Issue/Number
22
Publication Date
1-1-1992
Document Type
Article
DOI Link
Language
English
WOS Identifier
ISSN
0003-6951
Recommended Citation
Zhang, Z. H.; Chow, L.; Paschke, K.; Yu, N.; Tao, Y. K.; Matsuishi, K.; Meng, R. L.; Hor, P.; and Chu, W. K., "High-Energy Carbon-Ions Implantation - An Attempt to Grow Diamond Inside Copper" (1992). Faculty Bibliography 1990s. 621.
https://stars.library.ucf.edu/facultybib1990/621
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu
"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."