Modulating The Bipolar Junction Transistor Subjected To Neutron-Irradiation For Integrated-Circuit Simulation

    Authors

    J. J. Liou; J. S. Yuan;H. Shakouri

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Space; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Bipolar junction transistors (BJT's) are susceptible to particle bombardment in radiative environment. This paper presents a model which is capable of predicting BJT performance subjected to neutron irradiation and is suitable for SPICE circuit simulation. It is shown that neutron irradiation affects slightly the emitter-base space-charge region capacitance but strongly the forward-active dc current gain. Results calculated from the present model compare favorably with measured dependencies available in the literature. The present model is also implemented into SPICE, and the performance of a BJT differential amplifier is simulated.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    39

    Issue/Number

    3

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    593

    Last Page

    597

    WOS Identifier

    WOS:A1992HE79900020

    ISSN

    0018-9383

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