Modeling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors

    Authors

    W. W. Wong;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    Circuit; Engineering, Electrical & Electronic

    Abstract

    The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are influenced by the effective conducting channel length of the device. The effective channel length is modulated by the gate voltage and the drain voltage due to the variation of the thicknesses of the depletion layers associated with the top- and bottom-gate of the JFET. For a given gate voltage, the effective channel length will shrink if the drain voltage is increased, a mechanism normally described by the channel-length modulation coefficient lambda. This paper develops a model for calculating lambda, when combined with a recently developed JFET static model, this lambda model can be used to predict the saturation behaviour of JFETs. Experimental data are included in support of the model.

    Journal Title

    International Journal of Electronics

    Volume

    72

    Issue/Number

    4

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    533

    Last Page

    540

    WOS Identifier

    WOS:A1992HR74800002

    ISSN

    0020-7217

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