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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

Optic Effect Devices; Saturation; Physics; Applied

Abstract

Carrier sweep-out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of approximately 20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build-up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.

Journal Title

Applied Physics Letters

Volume

60

Issue/Number

1

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

97

Last Page

99

WOS Identifier

WOS:A1992GY79400034

ISSN

0003-6951

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