Authors

A. Miller; C. B. Park;P. Likamwa

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

Optic Effect Devices; Saturation; Physics, Applied

Abstract

Carrier sweep-out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of approximately 20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build-up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.

Journal Title

Applied Physics Letters

Volume

60

Issue/Number

1

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

97

Last Page

99

WOS Identifier

WOS:A1992GY79400034

ISSN

0003-6951

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