Abbreviated Journal Title
Appl. Phys. Lett.
Optic Effect Devices; Saturation; Physics; Applied
Carrier sweep-out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of approximately 20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build-up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.
Applied Physics Letters
Miller, A.; Park, C. B.; and Wa, P. Li Kam, "Time Resolved Measurements Of Cross-Well Transport In A Multiple Quantum-Well P-I-N Modulator At High Photogenerated Carrier Densities" (1992). Faculty Bibliography 1990s. 532.