Modeling Si/Si1-Xgex Heterojunction Bipolar-Transistors

    Authors

    J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Current Gain; Hbts; Si1-Xgex; Circuits; Silicon; Delay; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Modeling Si/Si1-xGex/Si heterojunction bipolar transistors (HBTs) has been examined. The model equations account for valence- and conduction-band discontinuities, heavy doping effects and high collector current effects. Bias-dependent emitter resistance and heterojunction capacitances are also included. Comparison between the model prediction and the experimental data is used to demonstrate the model utility and accuracy. Good agreement between the model prediction and measurement has been obtained. The model is useful for predicting the gate delay of emitter-coupled logic at different temperatures.

    Journal Title

    Solid-State Electronics

    Volume

    35

    Issue/Number

    7

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    921

    Last Page

    926

    WOS Identifier

    WOS:A1992JB92400006

    ISSN

    0038-1101

    Share

    COinS