Physical Models For Predicting The Performance Of Si/Si, Algaas/Gaas, And Si/Sige Solar-Cells

    Authors

    J. J. Liou

    Comments

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    Abbreviated Journal Title

    Sol. Energy Mater. Sol. Cells

    Keywords

    Heterojunction Bipolar-Transistors; Numerical-Simulation; Efficiency; Gaas; Si1-Xgex; Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    Analytical and physical models for homojunction and heterojunction solar cells are developed, and the performances of solar cells made by the Si/Si homojunction and made by the increasingly important and popular AlGaAs/GaAs and Si/SiGe heterojunctions compared. The models developed, which include relevant device physics such as the effective surface recombination velocity at the high-low junction and band discontinuities associated with heterojunctions, correctly explain the solar cell characteristics experimentally observed. Our calculations suggest that the highest efficiencies attainable for AlGaAs/GaAs, Si/Si, and Si/SiGe cells, with optimized doping concentrations but without surface passivation and geometry optimization, are 21.25%, 17.8% and 13.5%, respectively, under 1 AM1.5 sun condition. For concentrator cell applications, the efficiencies improve to about 24.5%, 22.2%, and 22.0% for AlGaAs/GaAs, Si/Si, and Si/SiGe cells, respectively, under 100 AM1.5 suns. While the AlGaAs/GaAs cell possesses the highest efficiency among the three cells, the Si/Si and Si/SiGe cells can achieve a satisfactory conversion efficiency at high sun concentration (22% at 100 suns), making them attractive for concentrator cell applications because their processing is the same as or is compatible with existing silicon technology. Model predictions for two Si/Si and one AlGaAs/GaAs cells compare favorably with data reported in the literature.

    Journal Title

    Solar Energy Materials and Solar Cells

    Volume

    29

    Issue/Number

    3

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    261

    Last Page

    276

    WOS Identifier

    WOS:A1993LB29800008

    ISSN

    0927-0248

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