Optimization Of Algaas/Gaas Heterojunction Bipolar-Transistors For Current Gain, Cutoff Frequency And Maximum Frequency

    Authors

    J. J. Liou

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Time; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The intrinsic HBT configurations (e.g. doping concentrations and layer thicknesses) are optimized for the current gain, cutoff frequency, and maximum oscillation frequency. The optimization is carried out based on an analytical HBT model which includes the high-current and thermal effects. The effects of the emitter, base and collector doping concentrations and layer thicknesses on the HBT performance are calculated and discussed. Optimal HBT intrinsic configurations, together with the corresponding HBT performance, are also suggested for both high-current and low-current regions.

    Journal Title

    Solid-State Electronics

    Volume

    36

    Issue/Number

    10

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    1481

    Last Page

    1491

    WOS Identifier

    WOS:A1993LR66000015

    ISSN

    0038-1101

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