Title

Optimization Of Algaas/Gaas Heterojunction Bipolar-Transistors For Current Gain, Cutoff Frequency And Maximum Frequency

Authors

Authors

J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Time; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

The intrinsic HBT configurations (e.g. doping concentrations and layer thicknesses) are optimized for the current gain, cutoff frequency, and maximum oscillation frequency. The optimization is carried out based on an analytical HBT model which includes the high-current and thermal effects. The effects of the emitter, base and collector doping concentrations and layer thicknesses on the HBT performance are calculated and discussed. Optimal HBT intrinsic configurations, together with the corresponding HBT performance, are also suggested for both high-current and low-current regions.

Journal Title

Solid-State Electronics

Volume

36

Issue/Number

10

Publication Date

1-1-1993

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/0038-1101(93)90058-x

Language

English

First Page

1481

Last Page

1491

WOS Identifier

WOS:A1993LR66000015

ISSN

0038-1101

Recommended Citation

"Optimization Of Algaas/Gaas Heterojunction Bipolar-Transistors For Current Gain, Cutoff Frequency And Maximum Frequency" (1993). Faculty Bibliography 1990s. 832.
https://stars.library.ucf.edu/facultybib1990/832