Modeling Of Gaas-Mesfet Output Conductance And Transconductance Frequency Dispersion

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    ANOMALIES; Engineering, Electrical & Electronic

    Abstract

    The output conductance and transconductance frequency dispersion phenomena of a GaAs MESFET have been modelled. A non-uniform temperature distribution between the substrate and surface channel is accounted for. Experimental data are used to justify the accuracy of the present model. Good agreement between the model prediction and measurement has been obtained. The output conductance and transconductance frequency dispersion has a significant impact in determining the small-signal voltage gain of a MESFET amplifier.

    Journal Title

    International Journal of Electronics

    Volume

    74

    Issue/Number

    1

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    51

    Last Page

    58

    WOS Identifier

    WOS:A1993KL63800005

    ISSN

    0020-7217

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