Laser endotaxy in silicon carbide and PIN diode fabrication

    Authors

    Z. Tian; N. R. Quick;A. Kar

    Comments

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    Abbreviated Journal Title

    J. Laser Appl.

    Keywords

    silicon carbide; laser solid phase diffusion; endolayer; endotaxy; PIN; diode; EDGE TERMINATION; VOLTAGE; SOLUBILITY; RECTIFIERS; DIFFUSION; CONTACTS; CARBON; LAYERS; Materials Science, Multidisciplinary; Optics; Physics, Applied

    Abstract

    A laser solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. x-ray energy dispersive spectroscopic analysis shows that the thickness of the endolayer is about 100 run. High resolution transmission electron microscopic images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. The resistivity of the endolayer formed in a 1.55 Omega cm silicon carbide wafer segment was found to be 1.1 x 10(5) Omega cm, which is sufficient for device fabrication and isolation. Annealing at 1000 degrees C for 10 min to remove hydrogen resulted in a resistivity of 9.4 x 10(4) Omega cm. The endolayer and parent silicon carbide epilayer were doped with aluminum using a laser doping technique to create p-regions on the top surfaces of the substrates in order to fabricate p-type-intrinsic type-n-type (PIN) diodes. The current-voltage characteristics of these diodes were compared with other PIN diodes fabricated using epilayers and other doping techniques. (C) 2008 Laser Institute of America.

    Journal Title

    Journal of Laser Applications

    Volume

    20

    Issue/Number

    2

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    106

    Last Page

    115

    WOS Identifier

    WOS:000256046400007

    ISSN

    1042-346X

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