Laser doping of chromium in 6H-SiC for white light emitting diodes

    Authors

    S. Bet; N. Quick;A. Kar

    Comments

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    Abbreviated Journal Title

    J. Laser Appl.

    Keywords

    silicon carbide; laser doping; electroluminescence (EL); white light; LEDs; SILICON-CARBIDE; SIC POLYTYPES; PHOSPHORS; EMISSION; NITROGEN; STATES; Materials Science, Multidisciplinary; Optics; Physics, Applied

    Abstract

    Laser doping has been utilized for fabricating white light emitting diodes with 6H-SiC wafers. The emission of different colors to ultimately generate white light is tailored on the basis of donor acceptor pair (DAP) recombination mechanism for luminescence. Chromium (Cr), which is an unconventional dopant that produces multiple acceptor sites per atom, was incorporated into SiC and conventional dopants such as aluminum (Al) and nitrogen (N) were also laser-doped to produce acceptor and donors states, respectively. A p-n junction was fabricated with these dopants and an electroluminescent broad spectrum (400-850 nm) corresponding to white light was observed. This white light is a result of the combination of red, green, and blue lights formed due to DAP recombination between Al-N (blue, 460-498 nm), Cr-N (green, 521-575 nm) and additional other impurity state transitions (red, 698-738 nm). (C) 2008 Laser Institute of America.

    Journal Title

    Journal of Laser Applications

    Volume

    20

    Issue/Number

    1

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    43

    Last Page

    49

    WOS Identifier

    WOS:000253906000007

    ISSN

    1042-346X

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