Title
Grain growth and void formation in dielectric-encapsulated Cu thin films
Abbreviated Journal Title
J. Mater. Res.
Keywords
BACK-ETCH METHOD; MICROSCOPY; MICROSTRUCTURE; AGGLOMERATION; CONDUCTIVITY; RESISTIVITY; BEHAVIOR; Materials Science, Multidisciplinary
Abstract
Grain growth in 40-nm-thick Cu films encapsulated by over- and under-layers Of SiO2, Al2O3, Si3N4, and MgO was investigated. The films were magnetron sputter deposited onto cooled SiO2/Si substrates in an ultrahigh vacuum purity environment. Ex situ annealing was performed at 400 and 800 degrees C in 1 atm reducing gas. Films deposited at -120 degrees C exhibited more extensive grain growth after annealing than films deposited at -40 degrees C. Films annealed at room temperature had grain sizes less than 35 nm. All films exhibited some void formation after annealing at 400 and 800 C, but the films encapsulated in Al2O3 exhibited the lowest area fraction of voids. The mean grain sizes of the Al2O3-encapsulated films, as measured by the linear intercept method, were 86 and 134 nm after annealing at 400 and 800 degrees C, respectively.
Journal Title
Journal of Materials Research
Volume
23
Issue/Number
7
Publication Date
1-1-2008
Document Type
Article
Language
English
First Page
2033
Last Page
2039
WOS Identifier
ISSN
0884-2914
Recommended Citation
"Grain growth and void formation in dielectric-encapsulated Cu thin films" (2008). Faculty Bibliography 2000s. 1177.
https://stars.library.ucf.edu/facultybib2000/1177
Comments
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