Grain growth and void formation in dielectric-encapsulated Cu thin films

    Authors

    B. Yao; T. Sun; V. Kumar; K. Barmak;K. R. Coffey

    Comments

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    Abbreviated Journal Title

    J. Mater. Res.

    Keywords

    BACK-ETCH METHOD; MICROSCOPY; MICROSTRUCTURE; AGGLOMERATION; CONDUCTIVITY; RESISTIVITY; BEHAVIOR; Materials Science, Multidisciplinary

    Abstract

    Grain growth in 40-nm-thick Cu films encapsulated by over- and under-layers Of SiO2, Al2O3, Si3N4, and MgO was investigated. The films were magnetron sputter deposited onto cooled SiO2/Si substrates in an ultrahigh vacuum purity environment. Ex situ annealing was performed at 400 and 800 degrees C in 1 atm reducing gas. Films deposited at -120 degrees C exhibited more extensive grain growth after annealing than films deposited at -40 degrees C. Films annealed at room temperature had grain sizes less than 35 nm. All films exhibited some void formation after annealing at 400 and 800 C, but the films encapsulated in Al2O3 exhibited the lowest area fraction of voids. The mean grain sizes of the Al2O3-encapsulated films, as measured by the linear intercept method, were 86 and 134 nm after annealing at 400 and 800 degrees C, respectively.

    Journal Title

    Journal of Materials Research

    Volume

    23

    Issue/Number

    7

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    2033

    Last Page

    2039

    WOS Identifier

    WOS:000257409800029

    ISSN

    0884-2914

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