Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy

    Authors

    Z. Q. Yu; Svnt Kuchibhatla; M. H. Engelhard; V. Shutthanandan; C. M. Wang; P. Nachimuthu; O. A. Marina; L. V. Saraf; S. Thevuthasan;S. Seal

    Comments

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    Abbreviated Journal Title

    J. Cryst. Growth

    Keywords

    doping; HRTEM; XPS; XRD; thin films; CeO2; sapphire; SAMARIA-DOPED CERIA; SOLID OXIDE FUEL; ELECTRICAL-PROPERTIES; THIN-FILMS; HIGH-TEMPERATURE; CEO2 CERAMICS; CONDUCTIVITY; ELECTROLYTES; GD; BEHAVIOR; Crystallography; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    We used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented Ce0.8Sm0.2O1.9 films on single-crystal c-Al2O3. Films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The film/substrate epitaxial relationship can be written as CeO2(1 1 1)//alpha-Al2O3(0 0 0 1) and CeO2[1 1 0]//alpha-Al2O3 [(2) over bar 1 1 0]. Ce and Sm were found to be in their highest oxidation state, +4 and +3, respectively. The doped cubic CeO2 films have a preferred (1 1 1) orientation. Significant conductivity difference was observed between single and polycrystalline films. A good orientation existing in the single-crystalline thin films may help long-range oxygen vacancy transport, ultimately contributing to significantly higher conductivities, in comparison to polycrystalline films. Published by Elsevier B.V.

    Journal Title

    Journal of Crystal Growth

    Volume

    310

    Issue/Number

    10

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    2450

    Last Page

    2456

    WOS Identifier

    WOS:000256237400006

    ISSN

    0022-0248

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