Evaluation of hot-electron effect on LDMOS device and circuit performances

    Authors

    J. S. Yuan;L. Jiang

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    DC-DC converter; gate charge; hot-electron; Laterally double-diffused; MOS (LDMOS); on-resistance; reliability; switching performance; TRANSISTORS; DEGRADATION; VOLTAGE; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects have been studied experimentally. The measured threshold voltage, on-resistance, and gate capacitance of LDMOS transistors all increase after stress. The transistor model simulation is compared with the experimental data. Good agreement between the model predictions and measurement results is obtained. The gate charging time of the LDMOS and a full-bridge dc-dc converter are simulated in Cadence SpectreRF. The simulation results indicate that the gate charge of the LDMOS increases and that the power efficiency of the full-bridge dc-dc converter decreases after hot-electron stress.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    55

    Issue/Number

    6

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    1519

    Last Page

    1523

    WOS Identifier

    WOS:000256155600032

    ISSN

    0018-9383

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