Evaluation of RF electrostatic discharge (ESD) protection in 0.18-mu m CMOS technology

    Authors

    X. Y. Du; S. R. Dong; Y. Han; J. J. Liou; M. X. Huo; Y. Li; Q. Cui; D. H. Huang;D. M. Wang

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    CIRCUITS; DESIGN; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Electrostatic discharge (ESD) protection design is challenging for RF integrated circuits (ICs) because of the trade-off between the ESD robustness and parasitic capacitance. ESD protection devices are fabricated using the 0.18-mu m RF CMOS process and their RF ESD characteristics are investigated by the transmission line pulsing (TLP) tester. The results suggest that the silicon controlled rectifier (SCR) is superior to the diode and NMOS from the perspective of ESD robustness and parasitic, but the SCR nevertheless possesses a longer turn-on time. (C) 2008 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    48

    Issue/Number

    7

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    995

    Last Page

    999

    WOS Identifier

    WOS:000259179900007

    ISSN

    0026-2714

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