Title

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-mu m CMOS technology

Authors

Authors

X. Y. Du; S. R. Dong; Y. Han; J. J. Liou; M. X. Huo; Y. Li; Q. Cui; D. H. Huang;D. M. Wang

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

CIRCUITS; DESIGN; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Electrostatic discharge (ESD) protection design is challenging for RF integrated circuits (ICs) because of the trade-off between the ESD robustness and parasitic capacitance. ESD protection devices are fabricated using the 0.18-mu m RF CMOS process and their RF ESD characteristics are investigated by the transmission line pulsing (TLP) tester. The results suggest that the silicon controlled rectifier (SCR) is superior to the diode and NMOS from the perspective of ESD robustness and parasitic, but the SCR nevertheless possesses a longer turn-on time. (C) 2008 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

48

Issue/Number

7

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

995

Last Page

999

WOS Identifier

WOS:000259179900007

ISSN

0026-2714

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