In-situ boron doping of chemical-bath deposited CdS thin films

    Authors

    H. Khallaf; G. Y. Chai; O. Lupan; L. Chow; H. Heinrich; S. Park;A. Schulte

    Abstract

    In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present successful approach towards B doping of CdS using CBD where a resistivity as low as 1.7 x10(-2) Omega cm and a carner density as high as 1.91 x 10(19) cm(-3) were achieved. The band gap of B-doped films was found to slightly decrease as the [B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B3+ ions likely center the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were uneffected by B-doping. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    Journal Title

    Physica Status Solidi a-Applications and Materials Science

    Volume

    206

    Issue/Number

    2

    Publication Date

    1-1-2009

    Document Type

    Article

    First Page

    256

    Last Page

    262

    WOS Identifier

    WOS:000264009900014

    ISSN

    1862-6300

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