Suppression of the superconducting transition temperature of doped graphene due to thermal fluctuations of the order parameter

Authors

    Authors

    V. M. Loktev;V. Turkowski

    Comments

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    Abbreviated Journal Title

    Phys. Rev. B

    Keywords

    DIRAC ELECTRONS; SYSTEMS; Physics, Condensed Matter

    Abstract

    In this Brief Report, we analyze the superconducting properties of doped single-and double-layer graphene systems by taking into account the fluctuations of the superconducting order parameter. Our analysis is rather general, and corresponds to a phenomenological electron-electron (hole-hole) attraction defined by its strength and range, and is independent of the origin of attraction. We show that in this model, similar to the case of two-dimensional doped metal, the thermal fluctuations of the order-parameter result in a significant reduction in the Berezinskii-Kosterlitz-Thouless critical temperature T(c) comparing to the mean-field temperature T(c)(MF), and there is a pseudogap phase with a suppressed density of states at temperature range T(c) < T < T(c)(MF). At low doping n(f), the critical temperature is proportional to n(f) in the double-layer case, and it is exponentially suppressed in the case of a single layer.

    Journal Title

    Physical Review B

    Volume

    79

    Issue/Number

    23

    Publication Date

    1-1-2009

    Document Type

    Article

    Language

    English

    First Page

    4

    WOS Identifier

    WOS:000267699500020

    ISSN

    1098-0121

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