Stress-mediated redistribution of Mn in annealed Si:Mn

    Authors

    A. Misiuk; A. Barcz; J. Bak-Misiuk; P. Romanowski; L. Chow;E. Choi

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater.

    Keywords

    Silicon; Manganese; Ion implantation; Annealing; Solid phase epitaxy; Magnetic semiconductor; MAGNETIC-PROPERTIES; SILICON; PRESSURE; Materials Science, Multidisciplinary; Physics, Condensed Matter

    Abstract

    Buried amorphous silicon (a-Si) is produced in Czochralski single crystalline silicon implanted at 340 K with Mn+ (Si:Mn, Mn-55(+) doses, D = 2 x 10(15) or 1.2 x 10(16) cm(-2), energy 160 keV). Stress-mediated redistribution of Mn and solid phase epitaxial re-growth (SPER) of a-Si at up to 1273 K (HT), also under hydrostatic Ar pressure up to 1.1 GPa (HP), have been investigated by SIMS, X-ray and related methods. As-implanted Si:Mn indicates magnetic ordering. SPER depends on Mn+ dosage, HT, HP all on processing time. Processing at 870-1000 K results in a minimum in the Mn concentration at similar to 0.15 mu m depth. At 1170 K and above. the diffusion of Mn to the Surface increases with HP. Our results help ill understanding the mechanisms of SPER and of origin of magnetic ordering in Mn:Si. (C) 2008 Elsevier B.V. All rights reserved.

    Journal Title

    Materials Science and Engineering B-Advanced Functional Solid-State Materials

    Volume

    159-60

    Publication Date

    1-1-2009

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    361

    Last Page

    364

    WOS Identifier

    WOS:000267635500085

    ISSN

    0921-5107

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