Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
LIGHT-EMITTING-DIODES; HETEROJUNCTION; FABRICATION; Physics, Applied
Abstract
Variable temperature electron beam induced current technique was employed for the profiling of ZnO p-n homojunctions and the extraction of minority electron diffusion length values in the Sb-doped p-type ZnO region. A thermally induced increase for diffusion length of minority electrons was determined to have an activation energy of similar to 145 meV. The latter parameter likely represents carrier delocalization energy and determines the increase of the diffusion length due to the reduction in recombination efficiency. (c) 2008 American Institute of Physics.
Journal Title
Applied Physics Letters
Volume
92
Issue/Number
10
Publication Date
1-1-2008
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Chernyak, L.; Schwarz, C.; Flitsiyan, E. S.; Chu, S.; Liu, J. L.; and Gartsman, K., "Electron beam induced current profiling of ZnO p-n homojunctions" (2008). Faculty Bibliography 2000s. 217.
https://stars.library.ucf.edu/facultybib2000/217
Comments
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