Title

Modeling gate oxide breakdown under bipolar stress

Authors

Authors

X. D. Duan;J. S. Yuan

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

SILICON DIOXIDE; HOLE INJECTION; TRAPPED HOLES; SIO2-FILMS; ANODE; SIO2; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Closed form analytical equations For time-dependent dielectric breakdown of the gate oxide under bipolar stress is proposed for the first time. The effect of stress frequency, gate current polarity, and temperature on the time to breakdown is accounted fur in the proposed hole injection detrap model. The lifetime improvement with increasing frequency is mainly due to the competition between the hole trapping process at the forward stress field and hole detrapping process at the reverse stress field. The modeling results show good agreement with the experimental data. (C) 2000 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

44

Issue/Number

9

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

1537

Last Page

1541

WOS Identifier

WOS:000089380700004

ISSN

0038-1101

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