Modeling gate oxide breakdown under bipolar stress

    Authors

    X. D. Duan;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    SILICON DIOXIDE; HOLE INJECTION; TRAPPED HOLES; SIO2-FILMS; ANODE; SIO2; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Closed form analytical equations For time-dependent dielectric breakdown of the gate oxide under bipolar stress is proposed for the first time. The effect of stress frequency, gate current polarity, and temperature on the time to breakdown is accounted fur in the proposed hole injection detrap model. The lifetime improvement with increasing frequency is mainly due to the competition between the hole trapping process at the forward stress field and hole detrapping process at the reverse stress field. The modeling results show good agreement with the experimental data. (C) 2000 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    44

    Issue/Number

    9

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    1537

    Last Page

    1541

    WOS Identifier

    WOS:000089380700004

    ISSN

    0038-1101

    Share

    COinS