Title

Conduction-band deformation effect on stress-induced leakage current

Authors

Authors

X. D. Duan;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

An improved model of the stress-induced leakage current including effect of the inelastic trap-assisted tunneling is proposed. The present model accounts for the conduction band deformation effect. The simulation results reveal that the conduction-band deformation effect cannot be neglected when trapped charge density is larger than 10(12) cm(-2). The model predictions are in good agreement with the experimental data. (C) 2000 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

44

Issue/Number

9

Publication Date

1-1-2000

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0038-1101(00)00093-9

Language

English

First Page

1703

Last Page

1706

WOS Identifier

WOS:000089380700029

ISSN

0038-1101

Recommended Citation

"Conduction-band deformation effect on stress-induced leakage current" (2000). Faculty Bibliography 2000s. 2508.
https://stars.library.ucf.edu/facultybib2000/2508