Conduction-band deformation effect on stress-induced leakage current

    Authors

    X. D. Duan;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    An improved model of the stress-induced leakage current including effect of the inelastic trap-assisted tunneling is proposed. The present model accounts for the conduction band deformation effect. The simulation results reveal that the conduction-band deformation effect cannot be neglected when trapped charge density is larger than 10(12) cm(-2). The model predictions are in good agreement with the experimental data. (C) 2000 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    44

    Issue/Number

    9

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    1703

    Last Page

    1706

    WOS Identifier

    WOS:000089380700029

    ISSN

    0038-1101

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