Title
A study of on-resistance and switching characteristics of the power MOSFET under cryogenic conditions
Abbreviated Journal Title
Int. J. Electron.
Keywords
77-K; Engineering, Electrical & Electronic
Abstract
The decrease in on-resistance of power MOSFETs operation under cryogenic temperature leads to a considerable reduction in heat generation inside the device. An experimental measurement of on-resistances at 77K, 173K, 243K and 295K was carried out by applying cryogenic cooling techniques. The decrease in on-resistance and capacitance associated with the temperature led to an enhancement of overall time response of the MOSFETs. Another advantage associated with operating MOSFETs under cryogenic temperature is the decrease of the internal thermal resistance. The present work demonstrated that by exposing the device to cryogenic conditions, it is possible to implement high frequency, high power applications with MOSFET devices.
Journal Title
International Journal of Electronics
Volume
87
Issue/Number
1
Publication Date
1-1-2000
Document Type
Article
Language
English
First Page
99
Last Page
106
WOS Identifier
ISSN
0020-7217
Recommended Citation
"A study of on-resistance and switching characteristics of the power MOSFET under cryogenic conditions" (2000). Faculty Bibliography 2000s. 2529.
https://stars.library.ucf.edu/facultybib2000/2529
Comments
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