Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices

    Authors

    L. Chernyak; A. Osinsky; V. N. Fuflyigin; J. W. Graff;E. F. Schubert

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    electron microscopy; semiconductor materials; superlattices; CARRIER DIFFUSION-LENGTH; SURFACE RECOMBINATION VELOCITY; BEAM-INDUCED; CURRENT; GAN; DEVICES; ENHANCEMENT; LIFETIME; FIELD; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type AlxGa1-xN/GaN superlattices with aluminum content x = 0.1 and 0.2 was measured perpendicular and parallel to the superlattice planes by the electron beam induced current (EBIC) technique. A large anisotropy in the transport properties was observed with the effect varying from 1 : 3 to 1 : 6. We attribute an experimentally observed diffusion length anisotropy to minority electron scattering during transport across the potential barriers of the superlattice. Reference p-GaN samples were also investigated, and the diffusion length was observed to be isotropic in both metal organic chemical vapor deposition (MOCVD) (L = 0.5 mum) and MBE (L = 0.27 mum) grown samples.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    48

    Issue/Number

    3

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    433

    Last Page

    437

    WOS Identifier

    WOS:000167253000007

    ISSN

    0018-9383

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