Title

Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices

Authors

Authors

L. Chernyak; A. Osinsky; V. N. Fuflyigin; J. W. Graff;E. F. Schubert

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

electron microscopy; semiconductor materials; superlattices; CARRIER DIFFUSION-LENGTH; SURFACE RECOMBINATION VELOCITY; BEAM-INDUCED; CURRENT; GAN; DEVICES; ENHANCEMENT; LIFETIME; FIELD; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type AlxGa1-xN/GaN superlattices with aluminum content x = 0.1 and 0.2 was measured perpendicular and parallel to the superlattice planes by the electron beam induced current (EBIC) technique. A large anisotropy in the transport properties was observed with the effect varying from 1 : 3 to 1 : 6. We attribute an experimentally observed diffusion length anisotropy to minority electron scattering during transport across the potential barriers of the superlattice. Reference p-GaN samples were also investigated, and the diffusion length was observed to be isotropic in both metal organic chemical vapor deposition (MOCVD) (L = 0.5 mum) and MBE (L = 0.27 mum) grown samples.

Journal Title

Ieee Transactions on Electron Devices

Volume

48

Issue/Number

3

Publication Date

1-1-2001

Document Type

Article

Language

English

First Page

433

Last Page

437

WOS Identifier

WOS:000167253000007

ISSN

0018-9383

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