Minority carrier transport in GaN and related materials

    Authors

    L. Chernyak; A. Osinsky;A. Schulte

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    BEAM-INDUCED CURRENT; VAPOR-PHASE EPITAXY; SCANNING ELECTRON-MICROSCOPE; DIFFUSION-LENGTH; SPATIAL-DISTRIBUTION; FILMS; CATHODOLUMINESCENCE; RECOMBINATION; DISLOCATIONS; LAYERS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Minority carrier transport properties are an indicator of AlGaN quality. This characteristic is particularly of significant importance for AlGaN-based bipolar devices. The goal of this review is to discuss different factors - temperature, doping level, dislocation density, electron current density - which affect minority carrier mobility, lifetime, and diffusion length, and to relate the changes in AlGaN transport properties to the functionality of electronic and optoelectronic devices. (C) 2001 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    45

    Issue/Number

    9

    Publication Date

    1-1-2001

    Document Type

    Review

    Language

    English

    First Page

    1687

    Last Page

    1702

    WOS Identifier

    WOS:000171362300023

    ISSN

    0038-1101

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