Title

A semi-empirical model for the AlGaAs/GaAs HBT long-term current instability

Authors

Authors

W. Zhou; J. J. Liou;C. I. Huang

Abbreviated Journal Title

Solid-State Electron.

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; BASE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

This paper develops a semi-empirical model for predicting the AlGaAs/GaAs heterojunction bipolar transistor (HBT) long-term current instability and mean time to failure (MTTF). The model involves the use of device physics as well as several empirical parameters which need to be determined from the pre- and post-burn-in data measured from a particular stress condition (i.e., stress temperature, current density, and time). Once these parameters are found, the model can then be used to predict the HBT reliability for various stress conditions. Experimental and modeling fitting for different HBTs subjected to thermal stress of 100-300 degrees C and current stress of 10(4) to 5 x 10(4) A/ cm(2) are included in support of the model. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

44

Issue/Number

3

Publication Date

1-1-2000

Document Type

Article

Language

English

First Page

541

Last Page

548

WOS Identifier

WOS:000085469300020

ISSN

0038-1101

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