A semi-empirical model for the AlGaAs/GaAs HBT long-term current instability

    Authors

    W. Zhou; J. J. Liou;C. I. Huang

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; BASE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    This paper develops a semi-empirical model for predicting the AlGaAs/GaAs heterojunction bipolar transistor (HBT) long-term current instability and mean time to failure (MTTF). The model involves the use of device physics as well as several empirical parameters which need to be determined from the pre- and post-burn-in data measured from a particular stress condition (i.e., stress temperature, current density, and time). Once these parameters are found, the model can then be used to predict the HBT reliability for various stress conditions. Experimental and modeling fitting for different HBTs subjected to thermal stress of 100-300 degrees C and current stress of 10(4) to 5 x 10(4) A/ cm(2) are included in support of the model. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    44

    Issue/Number

    3

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    541

    Last Page

    548

    WOS Identifier

    WOS:000085469300020

    ISSN

    0038-1101

    Share

    COinS