Title

Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems

Authors

Authors

W. Wu; S. H. Kang; J. S. Yuan;A. S. Oates

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

FILMS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A thermal model for determining the interconnect temperature of different interconnect systems is developed. The analytical model predictions are compared with the two-dimensional numerical simulation results using the finite element analysis. Good agreement between the analytical model and the finite element analysis is obtained. At high current densities, the temperature of the Cu/low-K interconnect is much higher than that of the Cu/SiO2 and Al/SiO2 interconnects due to the lower thermal conductivity of the low-K dielectric. (C) 2001 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

45

Issue/Number

1

Publication Date

1-1-2001

Document Type

Article

Language

English

First Page

59

Last Page

62

WOS Identifier

WOS:000166892600009

ISSN

0038-1101

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