Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems

    Authors

    W. Wu; S. H. Kang; J. S. Yuan;A. S. Oates

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    FILMS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A thermal model for determining the interconnect temperature of different interconnect systems is developed. The analytical model predictions are compared with the two-dimensional numerical simulation results using the finite element analysis. Good agreement between the analytical model and the finite element analysis is obtained. At high current densities, the temperature of the Cu/low-K interconnect is much higher than that of the Cu/SiO2 and Al/SiO2 interconnects due to the lower thermal conductivity of the low-K dielectric. (C) 2001 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    45

    Issue/Number

    1

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    59

    Last Page

    62

    WOS Identifier

    WOS:000166892600009

    ISSN

    0038-1101

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