Title

Modeling of direct tunneling and surface roughness effects on C-V characteristics of ultra-thin gate MOS capacitors

Authors

Authors

J. L. Zhang; J. S. Yuan; Y. Ma;A. S. Oates

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

OXIDE THICKNESS; NM; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Effects of direct tunneling and surface roughness on the capacitance-voltage characteristics of ultra-thin gate deep submicron MOS transistors have been studied. An improved equivalent circuit model to account for surface roughness and direct tunneling on the ultra-thin gate MOS capacitors in a unified manner is proposed. The capacitance subject to direct tunneling and surface roughness effect is smaller than that without surface roughness effect. (C) 2001 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

45

Issue/Number

2

Publication Date

1-1-2001

Document Type

Article

Language

English

First Page

373

Last Page

377

WOS Identifier

WOS:000167775000026

ISSN

0038-1101

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