Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
MINORITY-CARRIER TRANSPORT; DIFFUSION LENGTH; FILMS; Physics, Applied
Abstract
Electron-beam injection-induced increase of minority carrier diffusion length in p-type GaN was studied as a function of sample temperature ranging from 25 degreesC to 130 degreesC. It was found that the rate for diffusion length increase exponentially decays with increasing temperature. This decay was attributed to a temperature-activated release of electron-beam injected electrons trapped on Mg levels. The activation energy of these levels was found to be similar to178 meV. This is in good agreement with the previously reported position for Mg levels in the GaN band gap.
Journal Title
Applied Physics Letters
Volume
81
Issue/Number
9
Publication Date
1-1-2002
Document Type
Article
DOI Link
Language
English
First Page
1633
Last Page
1635
WOS Identifier
ISSN
0003-6951
Recommended Citation
Chernyak, Leonid; Burdett, William; and Osinsky, Andrei, "Study of temperature dependence for the electron injection-induced effects in GaN" (2002). Faculty Bibliography 2000s. 3121.
https://stars.library.ucf.edu/facultybib2000/3121
Comments
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