Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
P-I-N; DIFFUSION LENGTH; Physics, Applied
Abstract
It is demonstrated that short-time (up to 1200 s) electron injection into the p-region of GaN p-n junction, as a result of forward bias application, leads to a long-term multifold enhancement of the device peak responsivity as well as to a spectral broadening of the photoresponse. The effect is found to persist for several days and is related to an increased minority carrier diffusion length in the p region, due to an injected electron trapping on deep levels associated with Mg acceptors.
Journal Title
Applied Physics Letters
Volume
80
Issue/Number
6
Publication Date
1-1-2002
Document Type
Article
DOI Link
Language
English
First Page
926
Last Page
928
WOS Identifier
ISSN
0003-6951
Recommended Citation
Chernyak, Leonid; Schulte, Alfons; Osinsky, Andrei; Graff, John; and Schubert, E. Fred, "Influence of electron injection on performance of GaN photodetectors" (2002). Faculty Bibliography 2000s. 3122.
https://stars.library.ucf.edu/facultybib2000/3122
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu
"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."