Authors

G. Nootz; A. Schulte; L. Chernyak; A. Osinsky; J. Jasinski; M. Benamara;Z. Liliental-Weber

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

GALLIUM NITRIDE; SPECTROSCOPY; SCATTERING; STRAIN; GROWTH; Physics, Applied

Abstract

Spatially resolved Raman spectra were measured on thick GaN samples with known dislocation density grown by hydride vapor phase epitaxy. The frequencies of the E-2 (high) and E-1 (transverse optical) phonons shift to lower wave number over a distance of 30 mum from the sapphire substrate/GaN interface. The shifts are linearly correlated with the dislocation density suggesting that the strain due to the lattice mismatch at the interface determines both quantities.

Journal Title

Applied Physics Letters

Volume

80

Issue/Number

8

Publication Date

1-1-2002

Document Type

Article

Language

English

First Page

1355

Last Page

1357

WOS Identifier

WOS:000174009800013

ISSN

0003-6951

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