Title
Laser doping of silicon carbide substrates
Abbreviated Journal Title
J. Electron. Mater.
Keywords
laser doping; direct-write; silicon carbide; wide bandgap; semiconductor; IMPLANTATION; CONTACTS; AL; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied
Abstract
A direct-write laser conversion technique was used to produce n-type and p-type doped tracks on SiC substrates. Polycrystalline and single-crystal SiC substrates were investigated. The tracks irradiated in an inert gas exhibit a higher electrical resistance than those generated in dopant-containing atmospheres. The effects of various processing parameters, such as the laser-matter interaction time, laser-beam characteristics, number of exposures to the laser beam, and ambient gas in the laser processing chamber, are examined. The laser conversion technique can be used for selective-area doping of silicon carbide substrates to build semiconductor devices for high-temperature applications.
Journal Title
Journal of Electronic Materials
Volume
31
Issue/Number
3
Publication Date
1-1-2002
Document Type
Article
Language
English
First Page
200
Last Page
208
WOS Identifier
ISSN
0361-5235
Recommended Citation
"Laser doping of silicon carbide substrates" (2002). Faculty Bibliography 2000s. 3443.
https://stars.library.ucf.edu/facultybib2000/3443