Laser doping of silicon carbide substrates

    Authors

    I. A. Salama; N. R. Quick;A. Kar

    Abbreviated Journal Title

    J. Electron. Mater.

    Keywords

    laser doping; direct-write; silicon carbide; wide bandgap; semiconductor; IMPLANTATION; CONTACTS; AL; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

    Abstract

    A direct-write laser conversion technique was used to produce n-type and p-type doped tracks on SiC substrates. Polycrystalline and single-crystal SiC substrates were investigated. The tracks irradiated in an inert gas exhibit a higher electrical resistance than those generated in dopant-containing atmospheres. The effects of various processing parameters, such as the laser-matter interaction time, laser-beam characteristics, number of exposures to the laser beam, and ambient gas in the laser processing chamber, are examined. The laser conversion technique can be used for selective-area doping of silicon carbide substrates to build semiconductor devices for high-temperature applications.

    Journal Title

    Journal of Electronic Materials

    Volume

    31

    Issue/Number

    3

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    200

    Last Page

    208

    WOS Identifier

    WOS:000174370400006

    ISSN

    0361-5235

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