Atomic structure of Si-rich 3C-SiC(001)-(3x2): a photoelectron diffraction study

    Authors

    A. Tejeda; E. G. Michel; D. Dunham; P. Soukiassian; J. D. Denlinger; E. Rotenberg; Z. D. Hurych;B. Tonner

    Comments

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    Keywords

    (3x2); ALSD; nanowire; PED; PhD; photoelectron diffraction; SiC; silicon; carbide; Si-rich; structure determination; TAADM; ENERGY ELECTRON-DIFFRACTION; X-RAY PHOTOELECTRON; BETA-SIC(100) SURFACE; AUGER-ELECTRON; CRYSTALLOGRAPHY; SCATTERING; LINES; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Materials Science, Characterization & Testing; Optics

    Abstract

    The structure of the Si-rich 3C-SiC(001)-(3x2) surface reconstruction has been determined using x-ray photoelectron diffraction. The experimental results are only compatible with a modified version of the two-adlayer asymmetric dimer model. Other possible models can be discarded on the basis of our results.

    Journal Title

    Silicon Carbide and Related Materials - 2002

    Volume

    433-4

    Publication Date

    1-1-2002

    Document Type

    Article

    Language

    English

    First Page

    579

    Last Page

    582

    WOS Identifier

    WOS:000185077700139

    ISSN

    0255-5476

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