Authors

D. Dunham; S. Mehlberg; S. Chamberlin; P. Soukiassian; J. D. Denlinger; E. Rotenberg; B. P. Tonner;Z. D. Hurych

Abbreviated Journal Title

J. Vac. Sci. Technol. B

Keywords

INTERFACE FORMATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

We investigate the initial oxidation and interface formation of cubic silicon carbide for the silicon rich beta-SiC(100) 3x2 surface reconstruction by high resolution synchrotron radiation-based soft x-ray photoemission spectroscopy. The surface is exposed to low doses of molecular oxygen ranging from 1 up to 10 000 L, at surface temperatures from 25 to 500 degreesC. Significant formation of SiO(2) is found for the surface at room temperature, with the rate of oxidation increasing with temperature. Valence band data and Si 2p core level spectra show that even at low exposures, significant oxidation is taking place, with a surface reactivity to oxygen much larger than for silicon surfaces. The oxidation products, which are grown at very low temperatures (less than or equal to500 degreesC) include SiO(2) as a dominant feature but also substoichiometric oxides Si(+1), Si(+2), Si(+3), and significant amounts of mixed oxide products involving C atoms (Si-O-C). (C) 2003 American Vacuum Society.

Journal Title

Journal of Vacuum Science & Technology B

Volume

21

Issue/Number

4

Publication Date

1-1-2003

Document Type

Article; Proceedings Paper

Language

English

First Page

1876

Last Page

1880

WOS Identifier

WOS:000185080000126

ISSN

1071-1023

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