RF MOSFET: recent advances, current status and future trends

    Authors

    J. J. Liou;F. Schwierz

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    INTEGRATED-CIRCUIT; CMOS; TECHNOLOGY; TRANSISTOR; DESIGN; CONCEPTION; FREQUENCY; MODEL; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Recent advances in complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-oxide semiconductor field-effect transistors (MOSFETs) for RF/microwave applications. This paper covers the recent advances and current status of mainstream CMOS as the dominating technology in very large scale integration, future trends of RF MOSFETs, and applications of MOSFETs in RF electronics. Aspects of RF MOSFET modeling are also addressed. Despite some lingering debates, the prospects for RF MOS with operating frequencies in the lower GHz range are very promising. (C) 2003 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    47

    Issue/Number

    11

    Publication Date

    1-1-2003

    Document Type

    Review

    Language

    English

    First Page

    1881

    Last Page

    1895

    WOS Identifier

    WOS:000185502200001

    ISSN

    0038-1101

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