Effect of glycine and hydrogen peroxide on chemical-mechanical planarization of copper

    Authors

    S. Seal; S. C. Kuiry;B. Heinmen

    Abbreviated Journal Title

    Thin Solid Films

    Keywords

    atomic force microscopy; copper; corrosion; chemical-mechanical; planarization; glycine; hydrogen peroxide; X-ray photoelectron; spectroscopy; MULTILEVEL METALLIZATION; SLURRY; CORROSION; REMOVAL; FILMS; INTERCONNECTS; CMP; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

    Abstract

    Chemical-mechanical planarization (CMP) of copper is a vital process to produce sub-micron range and multilevel metallization to meet the demands of the current interconnect technology The present investigation was focussed to understand the oxidation, dissolution and modification of Cu surface using hydrogen peroxide as oxidizer and glycine as inhibitor during Cu-CMP employing electrochemistry as well as dynamic and static removal rate measurements. Surface modification of copper was investigated in detail using X-ray photoelectron spectroscopy to understand the interaction of Cu-H2O2-glycine complex formation during CMP. Atomic force microscopy was employed to reveal any change in surface morphology during the CMP process. In the presence of 0.1 M glycine, copper removal rate was found to be high in the solution containing 2.5% H2O2 at pH 4 because Of Cu2+-glycine complexation reaction. In the absence of glycine, the removal rate of copper decreased with increasing H2O2 concentration due to the formation of a less soluble copper oxide film. The present investigation helped understanding the mechanism of Cu surface alteration in presence of oxidizers and glycine for formulation of highly effective CMP-slurry. (C) 2002 Elsevier Science B.V. All rights reserved.

    Journal Title

    Thin Solid Films

    Volume

    423

    Issue/Number

    2

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    243

    Last Page

    251

    WOS Identifier

    WOS:000182542400018

    ISSN

    0040-6090

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