Effect of gate-oxide breakdown on RF performance

    Authors

    H. Yang; J. S. Yuan; Y. Liu;E. J. Xiao

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    circuit reliability; dielectric breakdown; equivalent circuit; low-noise; amplifier (LNA); RF; scattering parameters; DEGRADATION; TRANSISTORS; EXTRACTION; MOSFETS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The degradation of S-parameters of 0.16-mum nMOS devices due to gate-oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate-oxide breakdown is proposed. The influence of nMOSFET gate-oxide breakdown on the performance of a low-noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers break down, the circuit continues to work, despite that the performance of S-parameters and noise figure degrades significantly.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    3

    Issue/Number

    3

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    93

    Last Page

    97

    WOS Identifier

    WOS:000187434800006

    ISSN

    1530-4388

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