Title

Effect of gate-oxide breakdown on RF performance

Authors

Authors

H. Yang; J. S. Yuan; Y. Liu;E. J. Xiao

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

circuit reliability; dielectric breakdown; equivalent circuit; low-noise; amplifier (LNA); RF; scattering parameters; DEGRADATION; TRANSISTORS; EXTRACTION; MOSFETS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The degradation of S-parameters of 0.16-mum nMOS devices due to gate-oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate-oxide breakdown is proposed. The influence of nMOSFET gate-oxide breakdown on the performance of a low-noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers break down, the circuit continues to work, despite that the performance of S-parameters and noise figure degrades significantly.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

3

Issue/Number

3

Publication Date

1-1-2003

Document Type

Article

Language

English

First Page

93

Last Page

97

WOS Identifier

WOS:000187434800006

ISSN

1530-4388

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