Title

Modeling of time-dependent dielectric breakdown in copper metallization

Authors

Authors

W. Wu; X. D. Duan;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

copper diffusion; copper interconnect; dielectric breakdown; E model; time-dependent dielectric breakdown (TDDB); DIFFUSION-BARRIERS; CU METALLIZATION; SILICON DIOXIDE; FILMS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+, diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

3

Issue/Number

2

Publication Date

1-1-2003

Document Type

Article

Language

English

First Page

26

Last Page

30

WOS Identifier

WOS:000187434600001

ISSN

1530-4388

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