Modeling of time-dependent dielectric breakdown in copper metallization

    Authors

    W. Wu; X. D. Duan;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    copper diffusion; copper interconnect; dielectric breakdown; E model; time-dependent dielectric breakdown (TDDB); DIFFUSION-BARRIERS; CU METALLIZATION; SILICON DIOXIDE; FILMS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+, diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    3

    Issue/Number

    2

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    26

    Last Page

    30

    WOS Identifier

    WOS:000187434600001

    ISSN

    1530-4388

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