A comprehensive and analytical drain current model for pocket-implanted NMOSFETs

    Authors

    C. S. Ho; J. J. Liou; G. Chu;Y. C. Liu

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    VOLTAGE OPERATION; MOSFETS; CMOS; SUBTHRESHOLD; TECHNOLOGY; LAYERS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    An analytical drain current model is presented for NMOSFETs with pocket implantation. An effective doping concentration derived from the voltage-doping transformation is used to characterize the lateral doping profile of pocket implantation, and subsequently to model the threshold voltage of MOSFETs. Relevant device physics, such as the reverse short-channel effect, velocity saturation, and channel length modification are included in the present model. Moreover a discrete effective electron mobility model extracted from measured data is incorporated to improve the model accuracy. Her-mite interpolation is then applied to describe the drain current behavior in the transition region between the subthreshold and strong inversion regions. Model verifications are carried out using experimental data of MOS devices fabricated from a 0.14-mum DRAM technology. (C) 2003 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    48

    Issue/Number

    2

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    327

    Last Page

    333

    WOS Identifier

    WOS:000187361200018

    ISSN

    0038-1101

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