Title
A comprehensive and analytical drain current model for pocket-implanted NMOSFETs
Abbreviated Journal Title
Solid-State Electron.
Keywords
VOLTAGE OPERATION; MOSFETS; CMOS; SUBTHRESHOLD; TECHNOLOGY; LAYERS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
An analytical drain current model is presented for NMOSFETs with pocket implantation. An effective doping concentration derived from the voltage-doping transformation is used to characterize the lateral doping profile of pocket implantation, and subsequently to model the threshold voltage of MOSFETs. Relevant device physics, such as the reverse short-channel effect, velocity saturation, and channel length modification are included in the present model. Moreover a discrete effective electron mobility model extracted from measured data is incorporated to improve the model accuracy. Her-mite interpolation is then applied to describe the drain current behavior in the transition region between the subthreshold and strong inversion regions. Model verifications are carried out using experimental data of MOS devices fabricated from a 0.14-mum DRAM technology. (C) 2003 Elsevier Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
48
Issue/Number
2
Publication Date
1-1-2004
Document Type
Article
Language
English
First Page
327
Last Page
333
WOS Identifier
ISSN
0038-1101
Recommended Citation
"A comprehensive and analytical drain current model for pocket-implanted NMOSFETs" (2004). Faculty Bibliography 2000s. 4425.
https://stars.library.ucf.edu/facultybib2000/4425
Comments
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