Title

Laser direct writing and doping of diamond-like carbon, polycrystalline diamond, and single crystal silicon carbide

Authors

Authors

I. A. Salama; N. R. Quick;A. Kar

Comments

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Abbreviated Journal Title

J. Laser Appl.

Keywords

direct write; laser doping; n type; Schottky barrier; NITROGEN; GROWTH; HYDROGEN; FILMS; Materials Science, Multidisciplinary; Optics; Physics, Applied

Abstract

Nanosecond pulsed Nd:yttrium-aluminum-garnet laser treatment is applied to alter the electric properties of free standing polycrystalline diamond substrates, diamond-like carbon (DLC), and 4H-SiC single crystal wafers. In the case of DLC samples, the laser irradiation, nitrogen doping, as well as the incorporation of cobalt into the DLC layer reduces its electric resistance. Laser fabrication of Schottky barrier diode at the DLC-cobalt contact is demonstrated, and its nonlinear 1/C-2 VS V curve indicates a nonuniform dopant distribution. The nitrogen dopant profile in the laser-doped SiC wafer is obtained by secondary ion mass spectroscopy and the corresponding nitrogen diffusion coefficient under laser processing parameters is calculated. Laser doping enhances the nitrogen diffusivity in SiC and allows in situ fabrication of metal contacts with no additional materials. Scanning electron microscopy, wavelength dispersive spectroscopy, and x-ray photoelectron spectroscopy are used to study the surface composition and the binding states in the laser-treated samples. (C) 2004 Laser Institute of America.

Journal Title

Journal of Laser Applications

Volume

16

Issue/Number

2

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

92

Last Page

99

WOS Identifier

WOS:000221549400006

ISSN

1042-346X

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