Decoupling technique for CMOS gate with strong-coupled components

    Authors

    L. Yang;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEE Proc.-Circuit Device Syst.

    Keywords

    DELAY EVALUATION; INVERTER; Engineering, Electrical & Electronic

    Abstract

    A novel decoupling technique for a CMOS gate with strong-coupled components is presented. The feedback structure is reduced to a unidirectional one. The hysteresis phenomena are characterised. Using the waveform. relaxation technique, the decoupling principle and procedures are discussed in detail. The model predictions are verified by SPICE simulation.

    Journal Title

    Iee Proceedings-Circuits Devices and Systems

    Volume

    152

    Issue/Number

    3

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    279

    Last Page

    286

    WOS Identifier

    WOS:000231541400011

    ISSN

    1350-2409

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