Title

Voltage stress-induced performance degradation in NMOSFET mixer

Authors

Authors

C. Yu; H. Yang; E. Xiao;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEICE Electron. Express

Keywords

CMOS integrated circuits; hot carrier; stress; noise; gain; linearity; HOT-CARRIER; SOFT-BREAKDOWN; Engineering, Electrical & Electronic

Abstract

This paper presents an insight into the performance degradation in Gilbert mixer due to the voltage stress-induced hot carrier effects. Analytical analysis relates the performance degradation with the model parameter shifts caused by voltage stress. The stress-induced parameter shifts are examined experimentally. Performance degradation in mixer is investigated through Spectre-RF simulation with the models extracted from measured data.

Journal Title

Ieice Electronics Express

Volume

2

Issue/Number

5

Publication Date

1-1-2005

Document Type

Article

DOI Link

http://dx.doi.org/10.1587/elex.2.133

Language

English

First Page

133

Last Page

137

WOS Identifier

WOS:000239561000002

ISSN

1349-2543

Recommended Citation

"Voltage stress-induced performance degradation in NMOSFET mixer" (2005). Faculty Bibliography 2000s. 5816.
https://stars.library.ucf.edu/facultybib2000/5816