Inter-valence-band hole-hole scattering in cubic semiconductors

    Authors

    M. V. Dolguikh; A. V. Muravjov;R. E. Peale

    Comments

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    Abbreviated Journal Title

    Phys. Rev. B

    Keywords

    FAR-INFRARED-EMISSION; QUANTUM-WELLS; MONTE-CARLO; Physics, Condensed Matter

    Abstract

    Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between light- and heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably different transition probabilities and scattering-angle dependence than for scattering of holes on ionized impurities. These results are particularly important for hole lifetimes and relative subband populations in unipolar p-type devices, such as the hot hole p-Ge laser. Features of hole-hole scattering for spin polarized hole distributions are also discussed.

    Journal Title

    Physical Review B

    Volume

    73

    Issue/Number

    7

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    7

    WOS Identifier

    WOS:000235668900087

    ISSN

    1098-0121

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