Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
MOLECULAR-BEAM EPITAXY; MG-DOPED GAN; THIN-FILMS; PHOTOLUMINESCENCE; PHOSPHORUS; DEPOSITION; Physics, Applied
Abstract
The characteristics of an acceptor level in Sb-doped, p-type ZnO were studied using cathodoluminescence (CL) spectroscopy as a function of hole concentration. Variable-temperature CL measurements allowed us to estimate the activation energy of an Sb-related acceptor from temperature-induced decay of CL intensity. The values of activation energy of about 212 +/- 28, 175 +/- 20, 158 +/- 22, and 135 +/- 15 meV were obtained for samples with carrier concentrations of 1.3x10(17), 6.0x10(17), 8.2x10(17), and 1.3x10(18) cm(-3), respectively. The involvement of acceptor levels is supported by the temperature-dependent hole concentration measurements. The possible origins of the strong temperature dependence are discussed.
Journal Title
Applied Physics Letters
Volume
88
Issue/Number
20
Publication Date
1-1-2006
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Lopatiuk-Tirpak, O.; Schoenfeld, W. V.; Chernyak, L.; Xiu, F. X.; Liu, J. L.; Jang, S.; Ren, F.; Pearton, S. J.; Osinsky, A.; and Chow, P., "Carrier concentration dependence of acceptor activation energy in p-type ZnO" (2006). Faculty Bibliography 2000s. 6377.
https://stars.library.ucf.edu/facultybib2000/6377
Comments
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