Abbreviated Journal Title
J. Appl. Phys.
Keywords
THIN-FILMS; PHOSPHORUS; Physics, Applied
Abstract
Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184 +/- 10 meV. Irradiation with a low energy (5 kV) electron beam also resulted in an increase of diffusion length with a similar activation energy (219 +/- 8 meV). Both phenomena are suggested to involve a Sb-Zn-2V(Zn) acceptor complex. Saturation and relaxation dynamics of minority carrier diffusion length are explored. Details of a possible mechanism for diffusion length increase are presented.
Journal Title
Journal of Applied Physics
Volume
100
Issue/Number
8
Publication Date
1-1-2006
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0021-8979
Recommended Citation
Lopatiuk-Tirpak, O.; Chernyak, L.; Xiu, F. X.; Liu, J. L.; Jang, S.; Ren, F.; Pearton, S. J.; Gartsman, K.; Feldman, Y.; Osinsky, A.; and Chow, P., "Studies of minority carrier diffusion length increase in p-type ZnO : Sb" (2006). Faculty Bibliography 2000s. 6376.
https://stars.library.ucf.edu/facultybib2000/6376
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu