A novel dual-polarity device with symmetrical/asymmetrical S-Type I-V characteristics for ESD protection design

    Authors

    J. A. Salcedo;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    charge-pump ICs; dual-polarity conduction; electrostatic discharge; (ESD); S-type I-V characteristics; Engineering, Electrical & Electronic

    Abstract

    A novel and compact device with adjustable forward and reverse conductions and symmetrical/asymmetrical I-V characteristics for ESD (electrostatic discharge) applications is presented. The device allows for the dual-polarity conduction with the proper selection of blocking junction configurations. This design enables high-level ESD protections for various mixed-signal integrated circuits operating under a wide range of symmetrical and asymmetrical bias conditions.

    Journal Title

    Ieee Electron Device Letters

    Volume

    27

    Issue/Number

    1

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    65

    Last Page

    67

    WOS Identifier

    WOS:000234397800022

    ISSN

    0741-3106

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