Characterization of Pt-Ru binary alloy thin films for work function tuning

    Authors

    R. M. Todi; A. P. Warren; K. B. Sundaram; K. Barmak;K. R. Coffey

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    gate electrode; metal alloy; platinum-ruthenium (Pt-Ru); work function; CMOS; Engineering, Electrical & Electronic

    Abstract

    This letter describes materials and electrical characterization of Pt-Ru binary alloy metal gate electrodes for control of the electrode work function. The work function of the Pt-Ru binary alloy system can be tuned over a wide range of 4.8-5.2 eV. The results indicate that the change of film properties, i.e., resistivity, work function, and crystal structure, with composition is, consistent with the equilibrium phase diagram and that the work function in the face-centered cubic and hexagonal close-packed single-phase regions is only weakly dependent on composition, whereas a strong dependence is observed in the intermediate compositional range.

    Journal Title

    Ieee Electron Device Letters

    Volume

    27

    Issue/Number

    7

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    542

    Last Page

    545

    WOS Identifier

    WOS:000238712200005

    ISSN

    0741-3106

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