Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current

    Authors

    H. Wong; C. K. Wong; Y. Fu;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    ultrathin oxide; charge trapping; direct tunneling; GATE DIELECTRIC FILMS; RICH SILICON-NITRIDE; THERMAL-OXIDATION; INTERFACE STATES; EXCESS SILICON; OXYNITRIDE; MOSFETS; RELIABILITY; DEGRADATION; GENERATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    This work studies the constant current stressing effects on the ultrathin (1.7-3 nm) oxides prepared by thermal oxidation of silicon in nitric oxide (N2O). A simple process evaluation formula for extracting the stress-induced flatband shift is developed and validated with capacitance-voltage measurements. We find that the flatband degradation does not follow the power law, rather an exponential law with a quasi-saturation region is observed as a result of the slow trap generation rate or the generation of positive charge during the constant current stressing. The sources of trap generation are attributed to the Si-Si bonds, P-b centers, and nitride-related defects due to the over-constrained silicon atoms in the Si3N4 clusters at the interface. (c) 2005 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    50

    Issue/Number

    2

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    170

    Last Page

    176

    WOS Identifier

    WOS:000235864100012

    ISSN

    0038-1101

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